IP

Our R&D team, led by Prof. R. Popovic, invented some of the most advanced magnetic field sensors:

  • The first integrated 3D Hall Probe
  • The most sensitive Vertical Hall Devices
  • The best Angular Position Sensors
  • The most successful Compass Chip
  • Novel Current Sensors

We can help you develop your own advanced products based on these inventions and the related know-how. Or we can grant you a license on some of our patents or designs.

EP14176835.8 – Vertical Hall Device (granted: USA, CN, JP, CH, EU). Application: High-resolution CMOS integrated vertical Hall device.

EP17157517.8 – Angle sensor and method of measuring an angle of a magnetic field (granted: US, CH, EU, CN, JP, KR). Preferred Application: Accurate and fast Integrated Angular Position Sensors and Small Angle Detectors.

PCT/IB2019/059785 – Magnetic sensor with low noise and high bandwidth (granted DE, US, CN; pending: EU, KR)

PCT/IB2023/061331 – Magnetic field sensor system with a temperature response-compensated output signal and method for the temperature response-compensation of an output signal of a magnetic field sensor system (granted DE; pending: EU, US, CN)

PCT/EP2024/059639 – Magnetic field sensor array and method for measuring a magnetic field, etc (pending)

CMOS Integrated Horizontal Hall Device Cell, featuring high magnetic sensitivity and low 1/f noise, is compatible with the spinning current technique.

CMOS Integrated Horizontal Hall Device Cell

CMOS Integrated Vertical Hall Device Cell (patent pending), featuring high magnetic sensitivity and low 1/f noise, is compatible with the spinning current technique.

CMOS Integrated Vertical Hall Device Cell (patent pending)

CMOS Hall Spinning Current Integrated Circuit Cell, containing a horizontal and/or vertical Hall device, digital circuits and switches for the Hall spinning current biasing and signal readout

CMOS Hall Spinning Current Integrated Circuit Cell